2013. 1. 3 1/2 semiconductor technical data pg03dbtfc tvs diode for esd protection in portable electronics revision no : 2 protection in portable electronics applications. features h transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 5a(tp=8/20 s) h bidirectional type pin configuration structure. h small package for use in portable electronics. h suitable replacement for multi-layer varistors in esd protection applications. h protects one i/o or power line. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h cordless phone h personal digital assistants (pda s) h notebooks, desktops, & servers. h portable instrumentation. maximum rating (ta=25 ? ) tfsc dim millimeters b 0.80+0.10/-0.05 e 0.40 max 0.13 0.05 f 0.10 max g 0.25 max h a 1.00 0.05 + _ c 0.60 0.05 + _ d 0.30 0.05 + _ + _ e f cathode mark c d b a h g electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 50 w junction temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? marking t 21 21 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 3.3 v reverse breakdown voltage v br i t =1ma 4.2 - 6.2 v reverse leakage current i r v rwm =3.3v - - 20 a clamping voltage v c i pp =5a, tp=8/20 s - - 17 v junction capacitance c j v r =0v, f=1mhz - - 25 pf
2013. 1. 3 2/2 pg03dbtfc revision no : 2
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